Program

Monday, September, 5, 2016

 

17:00 – 21:00 Registration and Reception

Tuesday, September, 6, 2016

 

Chalcopyrites I

8:30
invited
New Applications of Chalcopyrite Crystals in Nonlinear Optics
V. Petrov
Max-Born-Institute for Nonlinear Optics and Ultrafast Spectroscopy, Germany
9:00 Fabrication of solar cells based on ZnSnP2 bulk crystals
S. Nakatsuka* (1), N. Yuzawa (2), S. Akari 2, J. Chantana (2), T. Minemoto (2) and Y. Nose (1)
(1) Department of Materials Science and Engineering, Kyoto University, Kyoto, Japan. (2) College of Science and Engineering, Ritsumeikan University, Shiga, Japan.
9:15 Enhanced understanding of planar defects in Cu(In,Ga)Se2 by correlative, multiscale analyses and comparison with device simulations
D. Abou-Ras* (1), N. Schäfer (1), J. Kavalakkatt (1), S.S. Schmidt (1), T. Rissom (1), R. Mainz (1), A. Weber (1), T. Unold (1), J. Haarstrich (2), C. Ronning (2), E. Simsek Sanli (3), P.A. van Aken (3), Q.M. Ramasse (4), H.J. Kleebe (5), O. Cojocaru-Mirédin (6), D. Azulay (7), I. Balberg (7), O. Millo (7)
(1) Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany. (2) Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Germany. (3) Max Planck Institute for Solid State Research, Stuttgart, Germany. (4) SuperSTEM Laboratory, SciTech Daresbury Campus, Daresbury  U.K.. (5) Technische Universität Darmstadt, Institut für Angewandte Geowissenschaften, Darmstadt, Germany. (6) RWTH Aachen, Physikalisches Institut IA, Aachen, Germany. (7) Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem, Israel.
9:30
invited
CuGaSe2 for highly efficient solar cells
H. Shibata
National Institute of Advanced Industrial Science and Technology, Japan.

Theory I

10:30
invited
Heusler compounds: Tunable materials with non trivial topologies
C. Felser
Max Planck Institute of Chemical Physics for Solids, Dresden, Germany.
11:00
invited
Finding the Needle in a Haystack: A High-Throughput Computational Approach to Materials Discovery
G. Hautier
Université catholique de Louvain, Belgium.
11:30 Ab-initio high-throughput search for stable perovskites for photovoltaics
S. Körbel* (1), M. A. L. Marques (2) and S. Botti (1)
(1) Institute of Condensed Matter Theory and Optics, Friedrich Schiller University Jena, Germany. (2) Institute of Physics, Martin Luther University Halle-Wittenberg, Germany.
12:00 A theoretical study on the pure-phase stability of complex solar absorber materials
P. Sarkar, C. L. Mayfield and M. N. Huda
Department of Physics, University of Texas at Arlington, Arlington, Texas, USA
12:15 First-Principles Analysis of Cu2Zn(Sn, Si/Ge)(S, Se)4 Alloys for Solar Cell Application
Sergiy Zamulko* (1), Rongzhen Chen (1,2), Clas Persson (1-3)
(1) Centre for Materials Science and Nanotechnology, University of Oslo, Norway. (2) Department of Physics, University of Oslo, Norway. (3) Department of Materials Science and Engineering, Royal Institute of Technology, Stockholm, Sweden.

Theory II

14:00 High pressure neutron scattering and ab initio study of the “chain” chalcogenide TlInSe2
S. H. Jabarov (1), G.S. Orudjev (1), T. G. Mammadov (1), Y. Shim (2), K. Wakita (3), N.T. Mamedov (1), S.E. Kichanov (4), A.I. Nadjafov (1), N.A.Ismayilova (1), N.T. Dang (4)
(1) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, and Graduate School of Engineering, Osaka Prefecture University, Sakai,  Japan. (3) Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, Narashino, Japan. (4) JINR, Dubna, Russia.
14:30 Electronic Structure and Optical Properties of Ruddlesden-Popper Perovskite Sulfides: first principle calculation
Husnu Koc (1), Selami Palaz (2), Gokay Ugur (3), Amirullah M. Mamedov* (4,5,), Ekmel Ozbay (4)
(1) Siirt University, Faculty of Science and Letters, Department of Physics, Siirt, Turkey. (2) Harran University, Faculty of Sciences, Department of Physics, Sanliurfa, Turkey. (3) Gazi University, Faculty of Sciences, Deparment of Physics, Ankara, Turkey. (4) Nanotechnology Research Center, Bilkent University,Bilkent, Ankara, Turkey. (5) Baku State University, International Scientific Center, Baku, Azerbaijan.
14:45 Pressure-induced phonon freezing in the Percolation-type Zn(Se,S) mixed crystal: Phonon-polaritons and ab initio calculations
H. Dicko (1), R. Hajj Hussein (1), O. Pagès*(1), A. Polian (2), A.V. Postnikov (1), F. Firszt (3), K. Strzałkowski (3), A. Paszkowicz (4), and L. Broch (1)
(1) LCP-A2MC, Institut Jean Barriol, Université de Lorraine, France. (2) Institut de Minéralogie, de Physique des Matériaux et de Cosmochimie, Sorbonne Universités, Paris, France. (3) Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University, Toruń, Poland. (4) Institute of Physics, Polish Academy of Sciences, Warsaw, Poland.
15:00 Competing Structures and Lattice Dynamics
in (In,Ga)Se and (In,Ga)2Se3 Semiconductors
J. Srour (1,2), A. Postnikov* (1), M. Badawi (1) and F. El Haj Hassan (2)
(1) Université de Lorraine, Metz, France. (2) Université Libanaise, Beirut, Lebanon.
15:15 Strain Energy Calculations of ZnTe1-xOx Crystal Using VFF Model for Intermediate Band Solar Cell
M. Bodiul Islam* (1, 2) and Yoichi Nabetani (1)
(1) Interdisciplinary Graduate School of Medicine and Engineering, University of Yamanashi, Yamanashi, Japan. (2) Department of Glass and Ceramic Engineering, Rajshahi University of Engineering & Technology, Rajshahi, Bangladesh.

Kesterites I

14:00 Cation distribution and point defect concentration in off-stoichiometric Cu2ZnGeSe4 compound semiconductors
R. Gunder (1,2), A. Franz (1), S. Schorr (1,2)
(1) Helmholtz-Zentrum Berlin für Materialien und Energie,  Berlin, Germany. (2) Freie Universität Berlin, Institut für Geologische Wissenschaften, Berlin, Germany.
14:15 Annealing behaviors of photoluminescence spectra on Cu2ZnSnS4 single crystals
S. Seto* (1) and H. Araki (2)
(1) National Institute of Technology, Ishikawa College, Tsubata, Ishikawa, Japan. (2) National Institute of Technology, Nagaoka College, Niigata, Japan.
14:30
invited
Kesterite-based solar cells: Ge-based strategies for improvement of device performance
Sergio Giraldo (1), Edgardo Saucedo (1), Markus Neuschitzer (1), Paul Pistor (1), and Alejandro Pérez-Rodríguez (1,2)*
Catalonia Institute for Energy Research (IREC)
15:00 Structural and Solar Cell Properties of Cu2ZnSnS4 Thin Film Fabricated by a Facile Spray Pyrolysis Method
S. Ikeda* (1), T. H. Nguyen (2), S. Fujikawa (2) and T. Harada (2)
(1) Department of Chemistry, Konan University, Kobe, Japan. (2) Research Center of Solar Energy Chemistry, Osaka University, Toyonaka, Japan.
15:15 A novel multiple-selenization process for enhanced reproducibility of Cu2ZnSn(S,Se)4 solar cells
M. Neuwirth* (1), H. Zhou (1), T. Schnabel (2), E. Ahlswede (2), H. Kalt (1) and M. Hetterich (1)
(1) Institute of Applied Physics, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany. (2) Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany.

Chalcopyrites II

16:00 Site Selective Doping of Zn for the p-type Cu(In,Ga)Se2 Thin Film for Solar Cell Application
Sho Shirakata
Ehime University, Ehime, Japan.
16:15 Epitaxial Thin Films of CuGaSe2 prepared on GaAs and band alignment to ZnO Electronic Structure and Morphology
A. Popp* and C. Pettenkofer
Helmholtz-Zentrum Berlin, Kekuléstraße 5, D-12489 Berlin, Germany.
17:00
invited
Nonlinear multicomponent chalcogenide crystals
L. Isaenko (1,2)
(1) Novosibirsk State University, Novosibirsk, Russia. (2) V.S. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk, Russia.
16:30 Ionization Effects on Cu(In,Ga)Se2 Thin-Film Solar cells
S. Kawakita* (1), M. Imaizumi (1), S. Ishizuka (2), H. Shibata (2) and S. Okuda (3)
(1)Japan Aerospace Exploration Agency (JAXA), Tsukuba, Japan. (2) Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan. (3) Osaka Prefecture University (OPU), Sakai, Japan.
16:45 A novel scheme of Interface design and control for devices of ternary compounds
Y. J. Liu (1), H.L. Hwang* (1,2), P.T.Lo (2)
(1) Shanghai Jiao Tong University1, Photovoltaic Research Center, Shanghai, China. (2) National Tsing Hua University, Hsinchu, Taiwan, ROC.
17:30 Structural, Electrical, and Compositional Analysis of Surface and Grain Boundary for Cu(In,Ga)Se2 Solar Cells by EBSD/SSRM/TEM-EDX
T. Nishimura* (1), S. Toki (1), H. Sugiura (2), K. Nakada (2), and A. Yamada (2)
(1) Department of Physical Electronics, Tokyo Institute of Technology, Tokyo, Japan. (2) Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan.

New Chalcogenides I

16:00
invited
Crystallographic and optical properties, and electronic structures of CuSbS2, CuSbSe2 and CuSb(S1-xSex)2 solid solution
T. Wada, and T. Maeda
Department of Materials Chemistry, Ryukoku University, Otsu, Japan.
16:30 Raman spectroscopy of optical phonons in TlInS2 layered crystals
Raul Paucar (1), Kazuki Wakita*(1), YongGu Shim (2), Oktay Alekperov (3) and Nazim Mamedov (3)
(1) Chiba Institute of Technology, Chiba, Japan. (2) Osaka Prefecture University, Sakai, Japan. (3) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
16:45 Effects of H2S annealing for Ag/Sn Thin Films Deposited by a Thermal Evaporation Method
Yoji Akaki * (1), Hayato Akita (1), Shigeyuki Nakamura (2), Hideaki Araki (3), Satoru Seto (4), Toshiyuki Yamaguchi (5)
(1) Nat. Inst. Tech., Miyakonojo Coll., Miyazaki, Japan. (2) Nat. Inst. Tech., Tsuyama Coll., Okayama, Japan. (3) Nat. Inst. Tech., Nagaoka Coll., Niigata, Japan. (4) Nat. Inst. Tech., Ishikawa Coll., Ishikawa, Japan. (5) Nat. Inst. Tech., Wakayama Coll., Wakayama, Japan.

Poster Session I

18:00 Even numbers
Ab initio calculations of phonon dispersion in CdGa2Se4
N.А. Abdullayev (1)*, Z.A. Jahangirli (1,2), Т.G. Кеrimovа (1), I.A. Mamedovа (1)
(1) Institute of Physics, Baku, Azerbaijan. (2) Azerbaijan Technical University, Baku, Azerbaijan.
Alternative buffer layers on Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 thin-film solar cell absorbers – a comparison using soft x-ray and electron spectroscopies
D. Hauschild* (1,2,3), T. Schnabel (4), M. Mezher (5), D. Kreikemeyer-Lorenzo (1), J. Carter (5), M. Blum (5), L. Kogler (5), A. Benkert (1,3), F. Meyer (3), J. Palm (6), F. Reinert (3), E. Ahlswede (4), C. Heske (1,2,5), and L. Weinhardt (1,2,5)
(1) Institute for Photon Science and Synchrotron Radiation (IPS), Karlsruhe Institute of Technology (KIT), Eggenstein-Leopoldshafen, Germany. (2) Institute for Chemical Technology and Polymer Chemistry (ITCP), Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany. (3) Experimental Physics VII, University of Würzburg, Würzburg, Germany. (4) Zentrum für Sonnenenergie-und Wasserstoff-Forschung, Stuttgart, Germany. (5) Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV), Las Vegas, NV, USA. (6) AVANCIS GmbH, Munich, Germany.
Composition-ratio control of CZTS films deposited by PLD
Masahiro Kotani* (1), Hiroki Miura (1), Yong-Gu Shim (2), and Kazuki Wakita (1)
(1) Chiba Institute of Technology, Chiba, Japan. (2) Osaka Prefecture University, Osaka, Japan.
Correcting for interference effects in photoluminescence in Cu(In,Ga)Se2 based thin films
Max Hilaire Wolter* (1), Patrick Reinhard (2), Benjamin Bissig (2), Stephan Bücheler (2), Philip Jackson (3) and Susanne Siebentritt (1)
(1) University of Luxembourg, Physics and Materials Science Research Unit, Laboratory for Photovoltaics, Luxembourg. (2) Empa, Dübendorf, Switzerland. (3) Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden-Württemberg (ZSW), Stuttgart, Germany.
Dielectric Coefficients and Hopping Conductivity in (TlGaSe2)1-x (TlInS2)x Solid Solutions
S.N. Mustafaeva*(1), M.M. Asadov (2) , M.M.Godjaev (1)
(1) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan. (2) Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Evaluation of CZTS films by the tip-enhanced Raman scattering
Shin Akejima (1), Yong-Gu Shim (2), and Kazuki Wakita* (1)
(1) Chiba Institute of Technology, Chiba, Japan. (2) Osaka Prefecture University, Osaka, Japan.
Exploring the Optical Properties of Cu-based Alloys
Rongzhen Chen* (1,2), Clas Persson (1,2,3)
(1) Department of Materials Science and Engineering, KTH Royal Institute of Technology, Stockholm, Sweden. (2) Centre for Materials Science and Nanotechnology, University of Oslo, Oslo, Norway. (3) Department of Physics, University of Oslo, Oslo, Norway.
Fabrication and optical characterization of multi-stacked CdSe/ZnSe quantum dot structures grown by using alternate beam supplying method
K. Kubo (1), M. Yoneta* (1), Y. Banden (1), M. Honda (2) and T. Taniyama (3)
(1) Okayama University of Science, Okayama, Japan. (2) Naruto University of Education, Naruto, Japan. (3) Tokyo Institute of Technology, Yokohama, Japan.
Fabrication of Perovskite Solar Cells by Reaction Between Spin-coated Precursor Films and CH3NH3I vapor
H. Ebe, S. Sasagawa, and H. Araki*
National Institute of Technology, Nagaoka College, Niigata, Japan.
Growth and optical properties of Cu(In,Ga)Se2 thin films on flexible metallic foils
N.N.Abdulzade (1), V.F. Gremenok (2), N.N. Mursakulov (1), Ch.E.Sabzaliyeva (1) , E.P.Zaretskaya (2)
(1) Institute of Physics, National Academy of Azerbaijan, Baku, Azerbaijan. (2) State Scientific and Production Association “Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus, Minsk, Belarus
Improvement of photoelectric conversion efficiencies of dye-sensitized solar cells consisting of hemispherical TiO2 films
Shogo Izumi, Ayame Mizuno, and Naoki Ohtani
Department of Electronics, Doshisha University, Kyoto, Japan.
Local Structure Analysis of Cu(In,Ga)Se2 by X-ray Fluorescence Holography
Sho Shirakata* (1), Yuma Kitamura (1), Shinji Yudate (1), Naohisa Happo (2), Shinya Hosokawa (3), and Kouichi Hayashi (4)
(1) Faculty of Engineering, Ehime University, Matsuyama, Ehime, Japan. (2) Faculty of Information Sciences, Hiroshima City University, Hiroshima, Japan. (3) Faculty of Science, Kumamoto University, Kumamoto, Japan. (4) Faculty of Engineering, Nagoya Institute of Technology, Aichi, Japan.
Morphology of CZTS Thin Films obtained through Solution Chemistry
Jitendra Kumar*, Sarang Ingole
Department of Materials Science and Engineering, Indian Institute of Technology Kanpur, Kanpur, India.
Nanostructured CdS thin films deposited by spray pyrolysis method
A. Kerimova, E. Bagiyev, and A.Bayramov*
Institute of Physics ANAS, Baku, Azerbaijan.
Near-forward Raman selection rules of the phonon-polariton created by alloying in (Zn, Be)Se
H. Dicko (1), O. Pagès (1)*, F. Firstz (2), A. Marasek (2), W. Paszkowicz (3), A. Maillard (4), C. Jobard (4), and L. Broch (1)
(1) LCP-A2MC, Institut Jean Barriol, Université de Lorraine, France. (2) Institute of Physics, N. Copernicus University, Toruń, Poland. (3) Institute of Physics, Polish Academy of Sciences, Warsaw, Poland. (4) LMOPS, Université de Lorraine – Sup ́elec, Metz, France.>/small>
Optical Properties of Epitaxial Unrelaxed Layers of InAs0.56Sb0.44
Kh. Ahmadova* (1), G. Kipshidze (2), B. Mehdiyev (1), N.Abdullayev (1), V. Tanriverdiyev (1), R. Guseynov (1), G. Belenky (2), N. Mamedov (1)
(1) Institute of Physics, Baku, Azerbaijan. (2) Stony Brook Unversty, New York, USA.
Oxide quasicrystals -A new form of ternary oxide ultrathin films
S. Förster* (1), S. Schenk (1), E. M. Zollner (1), R. Hammer (1), K. Meinel (1), W. Widdra1 (2)
(1) Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany. (2) Max Planck Institute of Microstructure Physics, Halle, Germany
Photoluminescence characterization of Cu2GeS3 bulk crystals
N. Aihara, Y. Matsumoto, and K. Tanaka
Nagaoka University of Technology, Nagaoka, Niigata, Japan.
Photoluminescence of CdIn2S4 and CdIn2S4:Dy
Z.Kadiroglu, T.G.Kerimova, I.G. Nasibov
Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Photos and thermally stimulated conductivity monocrystals TlGaSe2
Ak. Kh. Matiyev* (1), A.V. Inarsaev (2)
(1) The Ingush State University, Magas, Russia. (2) Grozny State Oil Technical University, Grozny, Russia.
Plasma-assisted self-formation of nanotip arrays on the surface of Cu(In,Ga)Se2 thin films
S. P. Zimin (1), E. S. Gorlachev (2), V. F. Gremenok* (3), K. Bente (4), D. A. Mokrov (1), I. Amirov (2) and V. V. Naumov (2)
(1) Yaroslavl State University, Yaroslavl, Russia. (2) Yaroslavl Branch of the Institute of Physics and Technology of the Russian Academy of Sciences, Yaroslavl, Russia. (3) Scientific-Practical Materials Research Center of the NAS of Belarus, Minsk, Republic of Belarus. (4) Applied Mineralogy, University Tübingen, Tübingen, Germany.
Preparation of CuInS2 films by PLD of Cu-In-S precursor layer and post-heat treatment in H2S gas and their application to solar cells
T. Kawabe* , T. Wada
Department of Materials Chemistry, Ryukoku University, Otsu, Japan.
Preparation of SiAlON phosphor films by electrical discharge pulse method
Minoru Dohi*, Makoto Hattori, Hidehito Takahashi, Masahiro Matsushita, Kouhei Kondou, Mamoru Sugita, Seiya Yamanaka and Akihiro Goto
Shizuoka Institute of Science and Technology, Shizuoka,Japan
Secondary ion mass spectrometry as a tool to measure S/(S+Se) gradients in Cu2ZnSn(S,Se)4
S. Grini* (1), N. Ross (1), T. Sky (1), C. Persson (1), C. Platzer-Björkman (2) and L. Vines (1)
(1) University of Oslo, Oslo, Norway. (2) Uppsala University, Uppsala, Sweden.
Swift heavy ion irradiation induced modification in CuInSe2 thin films
K. Rawat (1,2), F. Singh (3) and P.K. Shishodia1*
(1) Department of Electronics, Zakir Husain Delhi College, University of Delhi, Delhi, India. (2) Department of Electronic Science, University of Delhi South Campus, Delhi,India. (3) Inter University Accelerator Centre, New Delhi, India.
Synthesis and Characterization of Cu2ZnSnS4 Bulk Polycrystalline
A. Takeuchi*, K. Oishi, N. Aoyagi, G. Nishida, W. Shimizu, M. Nakagawa, M. Yamazaki and H. Katagiri
National Institute of Technology, Nagaoka College, Nagaoka, Niigata, Japan.
Synthesis and crystallographic properties of Cu2ZnSnS4, Cu2ZnSnSe4 compounds and solid solutions on their basis
A.U. Sheleg, V.G. Hurtavy* and V.A. Chumak
State Scientific and Production Association «Scientific-Practical Materials Research Centre of the National Academy of Sciences of Belarus», Minsk, Belarus.
The Role of Ag-alloying in Kesterite-based Solar Cells: Optoelectronic Characterization
C. Hages* (1), S. Levcenco (1), M. Koeper (2), A. Redinger (1), R. Agrawal (2), T. Unold (1)
(1) Dept. of Structure and Dynamics of Energy Materials, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (2) School of Chemical Engineering, Purdue University, West Lafayette, IN, USA.
Thermoluminescence study on TlInS2:Nd single crystals
N. Hasanli* (1), S. Delice (1) and M. Isik (2)
(1) Department of Physics, Middle East Technical University, Ankara, Turkey. (2) Department of Electrical and Electronics Engineering, Atilim University, Ankara, Turkey.
Vibrational Properties of ultrathin Perovskite Films
F. Schumann* (1), K. Meinel (1), and W. Widdra (1,2)
(1) Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany. (2) Max Planck Institute of Microstructure Physics, Halle, Germany.
Improvement of photoelectric conversion efficiencies of dye-sensitized solar cells consisting of hemispherical TiO2 films
Shogo Izumi, Ayame Mizuno, and Naoki Ohtani
Department of Electronics, Doshisha University, Kyoto, Japan
The impact of Sulphur during CZTISe kesterite growth monitored via in-situ laser light scattering and X-ray diffraction.
S. M. Lyam, S.Hartnauer, R. Scheer
Institute of Physics, Martin-Luther University Halle-Wittenberg, Germany.

Wednesday, September, 7, 2016

 

Kesterites II

8:30
invited
Interface engineering in Kesterite Solar cells
Fangyang Liu*(1,2), XiaojingHao (2), Zhengfu Tong (1), and Liangxing Jiang (1)
(1) School of Metallurgy and Environment, Central South University, Changsha, China. (2) School of Photovoltaic and Renewable Energy Engineering,University of New South Wales, Sydney, Australia.
9:00
invited
Formation and Doping of Kesterites and Chalcopyrites from Molecular Inks
H.W. Hillhouse*, J.A. Clark, A. Uh
Dept. of Chemical Engineering, University of Washington, Seattle, USA.
9:30 Na effect on minority-carrier lifetime for Cu2ZnSnSe4 solar cells
H. Tampo*, K.M. Kim, S. Kim, H. Hajime, K. Matsubara, and S. Niki
National Institute of Advanced Science and Technology (AIST), Ibaraki, Japan.

Pnictides

8:30 Magnetic Percolation in (Zn,Mn,Sn)As2 Thin Films
N. Uchitomi* (1), S. Hidaka (1), H. Toyota (1), M. Yamazaki (2), K. Takamura (3),
K. Mayama (4) and H. Uchida (4)

(1) Nagaoka University of Technology, Nagaoka, Japan. (2) National Institute of Technology, Nagaoka College, Nagaoka, Japan. (3) National Institute of Technology, Asahikawa College, Asahikawa, Japan. (4) Toshiba Nanoanalysis Corporation, Yokohama, Japan.
8:45 Composition-dependent bond stretching force constants in III-V ternary alloys
S. Eckner (1), M. C. Ridgway (2) and C. S. Schnohr* (1)
(1) Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Jena, Germany. (2) Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australia.
9:00 Epitaxial unrelaxed layers of InAs1-xSbx grown on compositionally graded buffers.
Y.N. Aliyeva (1)*, R.R. Guseynov (1), V.А. Tanriverdiyev (1), G. Kipshidze (2), Kh.V. Аliquliyevа (1), N.А. Аbdullayev (1), N.Т. Mamedov (1)
(1) Institute of Physics, Baku, Azerbaijan. (2) Stony Brook Unversty, Stony Brook, New York, USA.
9:15 Hybridization phenomena in valence-transition system EuPtP revealed by angle-resolved photoemission spectroscopy
H. Anzai* (1), K. Ichiki (1), H. Sato (2), E. F. Schwier (2), H. Iwasawa (2), K. Shimada (2), H. Namatame (2), M. Taniguchi (2), A. Mitsuda (3), H. Wada (3), and K. Mimura (1,2)
(1) Graduate School of Engineering, Osaka Prefecture University, Sakai, Japan. (2) Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima, Japan. (3) Graduate School of Science, Kyushu University, Fukuoka, Japan.
9:30 Recent Activities of III-V/Si Tandem Solar Cells
M. Yamaguchi*, K-H. Lee, K. Araki, K. Nakamura, N. Kojima and Y. Ohshita
Toyota Technological Institute, Nagoya, Japan.

New Chalcogenides II

10:30
invited
Cu2SnS3 and related ternary copper chalcogenides
A. Zakutayev
National Renewable Energy Laboratory, Denver, Golden CO, USA.
11:00
invited
Fabrication of ternary and quaternary chalcogenide compounds based on Cu, Zn, Sn and Si for thin film photovoltaic applications
G. Brammertz (1,2)*, B. Vermang (3,4), H. ElAnzeery (5), S. Sahayaraj (1,2,4), S. Ranjbar (1,2,6), M. Meuris (1,2), J. Poortmans (3,4)
(1) imec division IMOMEC – partner in Solliance, Diepenbeek, Belgium. (2) Institute for Material Research (IMO) Hasselt University – partner in Solliance, Diepenbeek, Belgium. (3) imec –partner in Solliance, Leuven, Belgium. (4) Department of Electrical Engineering, KU Leuven, Heverlee, Belgium. (5) Laboratory for photovoltaics, University of Luxembourg, Belvaux, Luxembourg. (6) I3N – Departamento de Física, Universidade de Aveiro, Campus Universitário de Santiago, Aveiro, Portugal.
11:30 Preparation and Comparison of efficient solar cells based on CuZn(In,Ga)Se3 absorbers with varying In/Ga ratio
11:45 Synthesis and characterization of Cu2Sn1-xGexS3
H. Araki* (1), M. Yamano (1), N. Aihara (2) and K. Tanaka (2)
(1) National Institute of Technology, Nagaoka College, Nagaoka, Niigata, Japan. (2) Nagaoka University of Technology, Nagaoka, Niigata, Japan.
12:00 Effect of alkali metal and sulfur vapor pressure on SnS thin films
grown by Sulfurization

S. Mikami1, T. Yokoi (1), H. Sumi (1), S. Aihara (1), I. Khatri (2) and M. Sugiyama* (1,2)
(1) Faculty of Science & Technology (2) Research Institute for Science and Technology Tokyo University of Science, Noda, Japan.

Chalcopyrites II

14:00
invited
Importance of near-surface material composition of Cu(In,Ga)Se2 investigated by correlation coefficient
Jakapan Chantana* and Takashi Minemoto
Department of Electrical and Electronic Engineering, Ritsumeikan University, Shiga, Japan.
14:30 Optical properties and electronic structures of CuIn3Se5 and CuGa3Se5
T. Maeda, W. Gong, M. Nishitani, and T. Wada
Department of Materials Chemistry, Ryukoku University, Otsu, Japan.
14:45 Investigation of carrier transport in CIGSe by highly spatially, spectrally, and time resolved cathodoluminescence microscopy
M. Müller* (1), M. Müller (1), T. Hölscher (2), S. Zahedi-Azad (2), M. Maiberg (2), F. Bertram (1), R. Scheer (2), and J. Christen (1)
(1) Otto-von-Guericke University Magdeburg, Magdeburg, Germany. (2) Martin-Luther-University Halle-Wittenberg, FG Photovoltaik, Halle, Germany.

Carbides & Oxides

14:00 3C-SiC bulk growth for solar cell applications
P. Schuh* (1), G. Litrico (2), F. la Via (2), M. Mauceri (3) and P. J. Wellmann (1)
(1) Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Erlangen, Germany. (2) CNR-IMM, sezione di Catania, Catania, Italy. (3) E. T. C. Epitaxial Technology Center, Catania, Italy.
14:15 Anisotropic transport properties and electron-phonon interaction in Ti3SiC2: experiment and ab initio calculations
A. Nassour*, V. Mauchamp and S. Dubois
Institut PPRIME, Département de Physique et Mécanique des Matériaux, CNRS Université de Poitiers, Cedex, France.
14:30
invited
High entropy oxides: a new class of functional materials
N. Dragoe*, D. Bérardan, S. Franger, D. Dragoe, A. K. Meena
Institut de Chimie Moléculaire et des Matériaux d’Orsay, Université Paris Sud, Orsay, France.

15:15 Excursion (Old Town; Saline Museum)
19:00 Banquet

Thursday, September, 8, 2016

 

Hybrid Perovskites

8:30
invited
Metal Halide Perovskite Materials for Photovoltaics: Recent Trends
Michael B Johnston
University of Oxford, Department of Physics, Clarendon Laboratory, Oxford, United Kingdom.
9:00
invited
Towards high-efficiency perovskite silicon tandem solar cells
Jan Christoph Goldschmidt* (1), Alexander Bett (1), Martin Bivour (1), Markus Kohlstädt (1), Seunghun Lee (1), Simone Mastroianni (1), Laura Mundt (1), Markus Mundus (1), Paul Ndione (2), Christian Reichel (1), Martin Schubert (1), Patricia Schulze (1), Clemens Veit (1), Welmoed Veurman (1), Karl Wienands (3), Kristina Winkler (1), Uli Würfel (1), Stefan Glunz (1,3) and Martin Hermle (1)
(1) Fraunhofer Institute for Solar Energy Systems ISE, Freiburg, Germany. (2) NREL, Golden, USA. (3) Albert-Ludwigs University, Faculty of Engineering, Freiburg, Germany.
9:30
invited
Chalcogenide Perovskites – Prediction of an Emerging Class of Ionic Semiconductors for Photovoltaics
Yi-Yang Sun (1) , Michael L. Agiorgousis (1), Peihong Zhang (2), Hao Zeng (2), and S. B. Zhang* (1)
(1) Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, New York, USA. (2) Department of Physics, University at Buffalo, State University of New York, Buffalo, New York, USA.

Ferroelectric PV I

10:30
invited
The Bulk Photovoltaic Effect in the Crystals without Center of Symmetry: BaTiO3 at the Nanoscale
Vladimir Fridkin
Institute of Crystallography of Russian Academy of Sciences
11:00
invited
The bulk photovoltaic effect in polar oxides for robust and efficient solar energy harvesting
Andrew M. Rappe
University of Pennsylvania
11:30
invited
Scanning probe-based tools for investigation of photoelectric effects in ferroelectrics
Mingmin Yang and Marin Alexe
University of Warwick, Department of Physics, Coventry, UK.
12:00
invited
Bulk Photovoltaic Effect in Multiferroic BiFeO3 Thin Films
S. Nakashima*, H. Fujisawa, K. Takayama, and M. Shimizu
University of Hyogo, Himeji, Japan.

Superconductors

14:00
invited
Origin of the non-monotonic variance of Tc in the 1111 iron based
superconductors with isovalent doping

H. Usui
Department of Physics, Osaka University, Toyonaka, Osaka, Japan.
14:30
invited
Kuprat- and Pnictide Superconductors
B. Keimer
Max-Planck-Institute for Solid State Research, Germany
15:00 Yb Valence State in Yb5Rh4Ge10
H. Sato* (1), Y. Utsumi (2), K. Katoh (3), K. Mimura (4), S. Ueda (5), H. Yamaoka (6), K. Umeo (7), K. Shimada (1), H. Namatame (1), M. Taniguchi (1)
(1) HiSOR, Hiroshima University, Higashi-Hiroshima, Japan. (2) Synchrotron SOLEIL, L’Orme des Merisiers, Gif-sur-Yvette, France. (3) Department of Applied Physics, National Defense Academy, Yokosuka, Japan. (4) Graduate School of Engineering, Osaka Prefecture University, Sakai, Japan. (5) Synchrotron X-ray Station at SPring-8, NIMS, Hyogo, Japan. (6) RIKEN SPring-8 Center, Hyogo, Japan. (7) N-BARD, Hiroshima University, Higashi-Hiroshima, Japan.
15:15 Two-Particle Self-Consistent Analysis for the Electron-Hole Asymmetry of Superconductivity in Cuprate Superconductors
D. Ogura, K. Kuroki
Department of physics, Graduate School of science, Osaka University, Toyonaka, Osaka, Japan.

Kesterites III

14:00 Chemical Composition Dependence of Photoluminescence from Cu2ZnSnS4 Thin Films with potential fluctuation
K. Tanaka*, Y. Takamatsu and S. Miura
Nagaoka University of Technology, Niigata, Japan.
14:15 Electronic Structure of Cu2ZnSn(SxSe1-x)4 Surface and CdS/Cu2ZnSn(SxSe1-x)4 Interface
Y. Udaka* (1), S. Takaki (1), K. Isowaki (1), T. Nagai (2), H. Tampo (2), K.M. Kim (2), S. Kim (2), H. Shibata (2), K. Matsubara (2), S. Niki (2), N. Sakai (3), T. Kato (3), H. Sugimoto (3) and N. Terada (1)
(1) Kagoshima Univ., Kagoshima, Japan. (2) AIST, Tsukuba, Japan. (3) Solar Frontier K.K., Atsugi, Japan.
14:30 Effect of Surface Treatment on the Cu2ZnSnS4 Thin Films using a Nonionic Surfactant
H. Miyazaki*(1), M. Aono (1), H. Kishimura (1) and H. Katagiri (2)
(1) Department of Materials Science and Engineering, National Defense Academy, Kanagawa, Japan. (2) Department of Electrical and Electronic Systems Engineering, National Institute of Technology, Nagaoka College, Niigata, Japan.
14:45 Electronic Structure of CdS/Cu2ZnSnSe4 Interface
T. Nagai* (1), Y. Udaka (2), S. Takaki (2), K. Isowaki (2), S. Kawamura (2), K. Kawasaki (2), H. Tampo (1), K. M. Kim (1), S. Kim (1), H. Shibata (1), N. Terada (2), K. Matsubara (1) and S. Niki (1)
(1) National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan. (2) Kagoshima University, Kagoshima, Japan.
15:00 Influence of surface treatments on kesterite and CIGSe absorbers studied with Kelvin Probe force microscopy
Alex Redinger* (1), Dieter Greiner (2), Thomas Unold (1)
(1) Department Structure and Dynamics of Energy Materials (EM-ASD), Helmholtz Zentrum Berlin, Berlin, Germany. (2) PvcomB, Helmholtz Zentrum Berlin, Berlin, Germany.
15:15 Transport properties of Cu2ZnSnS4 powder samples
E. Hajdeu-Chicarosh (1), M. Guc (1), K. Neldner (2), G. Gurieva (2), S. Schorr (2,3), E. Arushanov (1), and K. G. Lisunov (1)
(1) Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova. (2) Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (3) Freie Universität Berlin, Institut für Geowissenschaften, Berlin, Germany.

Ternary Oxides

16:00 Low Temperature Growth of ZnMgO Films by Spin-coated Method
Himeka Tominaga, and Kenji Yoshino*
Department of Applied Physics and Electronic Engineering, University of Miyazaki, Miyazaki, Japan.
16:15 Dielectric and ferroelectric properties of Ba1,65Sr3,35Nb10O30- – Ba4Na2 Nb10O30 ceramics with the TTB structure
R. Z. Mehdiyeva
Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
16:30 Amorphous InGaOx, a versatile electron transport layer for solar cells
M.D Heinemann* (1), K. Ellmer (2), M. Kölbach, D. Greiner (1), D. Erfurt (1), R. Klenk, R. Schlatmann (1) and C.A. Kaufmann (1)
(1) PVcomB, Berlin, Germany. (2) Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany.
16:45 Efficient thermal energy harvesting via nanoscale magnetoelectric perovskite/metal multilayers
S. R. Etesami* and J. Berakdar
Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany.
17:00 Growth and Annealing Effect of SrTiO3 Thin Films Grown by Pulsed Laser Deposition Using Fourth Harmonic Nd:YAG Pulsed Laser
K. Takamura*, T. Fujiwara, A. Yokota, M. Nakamura and K. Yoshimoto
National Institute of Technology, Asahikawa College, Asahikawa, Japan.
17:15 Ultimate resolution ferroelectric domain imaging
M. Christl* (1), S. Förster (1), K. Meinel (1), and W. Widdra (1,2)
(1) Institute of Physics, Martin-Luther-Universität Halle-Wittenberg, Halle, Germany. (2) Max Planck Institute of Microstructure Physics, Halle, Germany.

Phase Change Materials

16:00
invited
Overview of Phase-Change Materials and Phase-Change Memory Huai-Yu Cheng (1)*, Matthew BrightSky (2), Wei-Chih Chien (1), Hsiang-Lan Lung (1) and Chung Lam (2)
(1) Macronix International Co., Ltd., Emerging Central Lab., Hsinchu, Taiwan, ROC. (2) IBM T. J. Watson Research Center, Yorktown Heights, NY, USA.
16:30
invited
Novel Phase Change Materials by Design: The Role of Stoichiometry and Disorder
M. Wuttig
RWTH Aachen University of Technology, Germany
17:00
invited
Nanosecond DFT simulations of amorphous-to-crystalline transition
J. Akola* (1,2), J. Kalikka (1,2) and R.O. Jones (3)
(1) Department of Physics, Tampere University of Technology, Tampere, Finland. (2) COMP Centre of Excellence, Aalto University, AALTO, Finland. (3) Peter-Grünberg-Institut (PGI-1), Forschungszentrum Jülich, Jülich, Germany.

Poster Session II

17:30 Odd numbers

Studying the properties of electrodeposited CZTS films
K. Urazov* (1,2), M. Dergacheva (1) and G. Khussurova (1)
(1) Sokolsky Institute of Fuels, Catalysis and Electrochemistry, Almaty, Kazakhstan. (2) Kazakh-British Technical University, Almaty, Kazakhstan.
Surface Enhanced Raman Scattering of Whole Blood on ZnO Surface
O.K. Gasymov* (1), O.Z. Alekperov (1), A. H. Aydemirova (1), N. Kamilova (2), R.B. Aslanov (1), A.H. Bayramov (1) and A. Kerimova (1)
(1) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan. (2) Saglam Nesil Scientific Research Medical Center, Ministry of Health, Yasamal, Baku, Azerbaijan.
Physico-chemical properties of the TlGaS2 – TlSbS2 system
E.M.Kerimova, S.N.Mustafaeva, N.Z.Gasanov, K.M.Huseynova, A.I.Gasanov
Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Preparation of Zn2SiO4:Mn2+ films by electrical discharge pulse method
Makoto Hattori*, Yuya Suzuki, Akihiro Goto, Minoru Dohi
Shizuoka Institute of Science and Technology, Shizuoka, Japan.
The X-ray Dosimetry of AgGaSe2 Single Crystal
S.N. Mustafaeva* (1), M.M. Asadov (2) , D.T. Guseinov (1)
(1) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan. (2) Institute of Catalysis and Inorganic Chemistry, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Molybdenum diselenide thin films for solar cell application
VA. Bayramov*, E. Aliyeva, E. Mammadov, Z. Jahangirli and N. Mamedov
Institute of Physics ANAS, Baku, Azerbaijan.
Low band gap CuIn(S,Se)2 thin film solar cells prepared using a stable molecular ink
Yajie Wang* (1), Xianzhong Lin (1), Lan Wang (1), Tristan Köhler (1), Martha Ch. Lux-Steiner (1,2), and Reiner Klenk (1)
(1) Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (2) Freie Universität Berlin, Fachbereich Physik, Berlin, Germany.
Application of Mn or Cr doped chalcopyrite-type materials for spin devices
V. L. Shaposhnikov* (1), A. V. Krivosheeva (1), A. L. Danilyuk (1), J.-L. Lazzari (2) and V. E. Borisenko (1)
(1) Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. (2) Aix-Marseille Université, CNRS, Campus de Luminy, Marseille, France.
Effects of Hydrogen Peroxide Solution Treatment on Chemical and Physical Properties of Cu2ZnSnS4 Films
H. Miyazaki1, M. Aono * (1), H. Kishimura (1) and H. Katagiri (2)
(1) Department of Materials Science and Engineering, National Defense Academy, Kanagawa, Japan. (2) Department of Electrical and Electronic Systems Engineering,National Institute of Technology, Nagaoka College, Niigata, Japan.
Structural trends in chalcopyrite based intermediate band absorber materials
Julien Marquardt* (1,2), Alexandra Franz (1), Christiane Stephan (2,3), Susan Schorr (1,2)
(1) Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (2) Freie Universität Berlin, Institut für Geologische Wissenschaften, Berlin, Germany. (3) Bundesanstalt für Materialforschung und -prüfung (BAM), Berlin, Germany.
AIBIIICVI2 ( A=Cu, Ag; B=Ga, In; C=S, Se, Te) Based Photonic Crystal Superlattices: Optical Properties
Sevket Simsek (1), Selami Palaz (2), Chingiz Akhundov (3), Amirullah M. Mamedov* (3,4), Ekmel Ozbay (4)
(1) Hakkari University, Faculty of Engineering, Department of Material Science and Engineering, Hakkari, Turkey. (2) Harran University, Faculty of Science and Letters, Department of Physics, Sanliurfa, Turkey. (3) Baku State University, International Scientific Center, Baku, Azerbaijan. (4) Bilkent University, Nanotechnology Research Center, Ankara, Turkey.
Low resistivity of Ga-doped ZnO Films by Non-vacuum Process doped O Non vacuum at Low Temperature
Himeka Tominaga, and Kenji Yoshino*
Department of Applied Physics and Electronic Engineering, University of Miyazaki Engineering, Miyazaki, Japan.
Local Growth of CuInSe2 Micro-Absorbers
Berit Heidmann* (1,2), Franziska Ringleb (3), Katharina Eylers (3), Jörn Bonse (4), Stefan Andree (4), Jörg Krüger (4), Sergiu Levcenco (5), Thomas Unold (5), Torsten Boeck (3), Martha Lux-Steiner (1,6), Martina Schmid (1,2)
(1) Freie Universität Berlin, Berlin, Germany. (2) Nanooptische Konzepte für die PV, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (3) Leibniz-Institut für Kristallzüchtung, Berlin, Germany. (4) Bundesanstalt für Materialforschung und –prüfung, Berlin, Germany. (5) Abteilung Struktur und Dynamik von Energiematerialien, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany. (6) Institut Heterogene Materialsysteme, Helmholtz-Zentrum Berlin für Materialien und Energie, Berlin, Germany.
Photoluminescence study of TlInS2 using confocal system
Raul Paucar (1), Kazuki Wakita*(1), YongGu Shim (2), Oktay Alekperov (3) and Nazim Mamedov (3)
(1) Chiba Institute of Technology , Chiba, Japan. (2) Osaka Prefecture University, Sakai, Japan. (3) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
A closer look into ageing mechanisms of Cu(In,Ga)Se2 solar cells
T. Lavrenko* (1), Th. Walter (1) and B. Plesz (2)
(1) Ulm University of Applied Sciences, Ulm, Germany. (2) Budapest University of Technology and Economics, Budapest, Hungary.
Sol-Gel synthesis of Cu2ZnSnS4 nanoparticles for photovoltaic applications
Kusum Rawat (1,2), P.K. Shishodia* (1)
(1) Zakir Husain Delhi College, University of Delhi, Delhi, India. (2) Department of Electronic Science, University of Delhi South Campus, Delhi, India.
Formation of nanodimentional layers of ternary solid solutions on GaSb plates surfaces by solid-phase substitution reactions
N.N.Abdulzade (2), V.I.Vasil’ev (1), G.S.Gagis (1), N.N.Mursakulov (2)
(1) Ioffe Physico-Technical Institute of the Russian Academy of Sciences, St Petersburg, Russian Federation. (2) Institute of Physics of Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Investigation of detection limits of ZnSe and Cu2SnSe3 secondary phases
in Cu2ZnSnSe4

G. Gurieva* (1), S. Levcenco (1), A. Pereira Correia de Sousa (1,2), T. Unold (1) and S. Schorr (1,3)
(1) Helmholtz Zentrum Berlin fur Materialien and Energie GmbH, Berlin, Germany. (2) Universidade de Coimbra, Physics Department, Coimbra, Portugal. (3) Free University Berlin, Institute of Geological Sciences, Berlin, Germany.
Development and advanced characterization of Cu2ZnSn(S,Se)4 surface
passivation processes for efficient kesterite based solar cells

Haibing Xie* (1), Lorenzo Calvo-Barrio (2,3), Yudania Sánchez (1), Tarik Jawhari (2), Moisés Espíndola-Rodríguez (1), Max Guc (1), Victor Izquierdo-Roca (1), Alejandro Pérez-Rodríguez (1,3), Edgardo Saucedo (1)
(1) IREC, Catalonia Institute for Energy Research, Sant Adrià del Besòs, Spain. (2) Centres Científics i Tecnològics de la Universitat de Barcelona (CCiTUB), Barcelona, Spain. (3) IN2UB, Departament d’Electrònica, Universitat de Barcelona, Barcelona, Spain.
Correlation between interband and cation defects photoluminescence and photoconductivity in ZnGa2Se4 crystals
S.G. Asadullayeva, G.Y. Eyyubov, O.Z. Alekperov*
Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Sensing properties of shell-core Ga2O3/GaN:Ox@SnO2 belt based nano-and micro-sensors
L. Ghimpu (1), O. Lupan (2,3), T. Braniste (2), V. Postica (2), I. Paulowicz (3),
L. Kienle (3), R. Adelung (3), and I. Tiginyanu (1,2)

(1) Institute of Electronic Engineering and Nanotechnologies, Academy of Sciences of Moldova, Chisinau, Republic of Moldova. (2) NCMST and Department of Microelectronics and Biomedical Engineering, Technical University of Moldova, Chisinau, Republic of Moldova. (3) Faculty of Engineering, Institute for Materials Science, Christian-Albrechts Universität zu Kiel, Kiel, Germany.
Optical and Magnetic Properties of Some X2YZ Compounds: ab initio calculations
Selami Palaz (1), Husnu Koc (2), Haci Ozisik (3), Engin Deligoz (3), Amirullah
M.Mamedov*(4,5), Ekmel Ozbay (4)

(1) Department of Physics, Harran University, Urfa, Turkey. (2) Department of Physics, Siirt University, Siirt, Turkey. (3) Department of Physics, Aksaray University, Aksaray, Turkey. (4) Nanotechnology Research Center-NANOTAM, Bilkent University, Ankara, Turkey. (5) International Scientific Research Center, Baku State University, Baku, Azerbaijan.
Cu2(Sn1-xGex)S3 solar cells prepared via co-evaporation and annealing in germanium sulfide and sulfur vapor
S. Sasagawa, A. Yago, A. Kanai, and H. Araki *
Nat. Inst. Tech., Nagaoka Coll., 888 Nishikatakai, Nagaoka, Niigata, Japan.
Comparison of buffer layers on SnS thin-film solar cells prepared via
co-evaporation

A. Yago (1), S. Sasagawa (1), Y. Akaki (2), S. Nakamura (3), H Oomae (4), H. Katagiri (1) and H. Araki *(1)
(1) Nat. Inst. Tech., Nagaoka Coll., Niigata, Japan. (2) Nat. Inst. Tech., Miyakonojo Coll., Miyazaiki, Japan. (3) Nat. Inst. Tech., Tsuyama Coll., Okayama, Japan. (4) Nat. Inst. Tech., Kushiro Coll., Hokkaido, Japan.
Hopping conductivity of Cu2ZnGe1-xSnxSe4 crystals in magnetic field
E. Hajdeu-Chicarosh (1,2), E. Lähderanta (1), M. A. Shakhov (3), G. Gurieva* (4), I. V. Bodnar (5), S. Schorr (4,6), M. Guc (2), E. Arushanov (2) and K. G. Lisunov (1,2)
(1) Department of Mathematics and Physics, Lappeenranta University of Technology, Lappeenranta, Finland. (2) Institute of Applied Physics, Academy of Sciences of Moldova, Chisinau, Republic of Moldova. (3) Ioffe Institute, St. Petersburg, Russian Federation. (4) Helmholtz Zentrum Berlin für Materialien und Energie, Berlin, Germany. (5) Department of Chemistry, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus. (6) Freie Universität Berlin, Institut für Geowissenschaften, Berlin, Germany.
Photoluminescence Study of Cu2ZnSnS4 Thin Film Solar Cells
M. Yamazaki*, M. Nakagawa, K. Jimbo, Y. Shimamune, and H. Katagiri
National Institute of Technology, Nagaoka College, Niigata, Japan.
Raman Spectra of Ni1-xZnxFe2O4 Ferrites
Sh. N. Aliyeva*, A. M. Kerimova, S. S. Babayev, T. R. Mehdiyev
Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
Effects of Substrate Temperature for Sn-S Thin Films Deposited by a
Thermal Evaporation Method

Yoji Akaki* (1), Kazuya Iwasaki (1), Shigeyuki Nakamura (2), Hideaki Araki (3)
(1) Nat. Inst. Tech., Miyakonojo Coll., Miyazaki, Japan. (2) Nat. Inst. Tech., Tsuyama Coll., Okayama, Japan. (3) Nat. Inst. Tech., Nagaoka Coll., Niigata, Japan.
Demonstration of Spin-Phonon Coupling in IR, THz and MW Spectra of
Sr1-xBaxMn1-yTiyO3 Ceramics

V. Goian (1,2)*, V. Bovtun (1), C. Kadlec(1), F. Kadlec (1), M. Kempa (1), D. Nuzhnyy (1), B. Dabrowski (3), and S. Kamba (1)
(1) Institute of Physics, Czech Academy of Sciences, Prague, Czech Republic. (2) Institute of Physics, Martin-Luther-Universitat Halle-Wittenberg, Halle, Germany. (3) Department of Physics, Northern Illinois University, DeKalb, IL, USA.
Monitoring BaTiO3 phase transitions in multiferroic layer systems
through binding energy shifts in photoelectron spectroscopy

K.-M. Schindler* (1), M. Welke (2), P. Huth (2), K. Dabelow (2), M. Gorgoi (3), A. Chassé (1), and R. Denecke (2)
(1) Martin-Luther-Universität Halle-Wittenberg, Institut für Physik, Halle, Germany. (2) Universität Leipzig, Wilhelm-Ostwald-Institut für Physikalische und Theoretische Chemie, Leipzig, Germany. (3) Helmholtz Zentrum Berlin für Materialien und Energie GmbH, Berlin, Germany.
Structural and optical analysis of co-evaporated In2S3 and In2S3:V for solar cell absorber applications
Leonard A. Wägele (1), Galina Gurieva (2), Diana Rata (1), Roland Scheer (1)
(1) Martin Luther University Halle-Wittenberg, Institute of Physics, Halle (Saale). (2) Helmholtz Zentrum Berlin, Department Structure and Dynamics of Energy Materials, Berlin, Germany.
Termination control of magnetic order at a complex oxide interface
S. Das (1,2), A. D. Rata (1), I. V. Maznichenko (1), S. Agrestini (3), E. Pippel (4), K. Chen (5), S. M. Valvidares (6), H. Babu Vasili (6), J. Herrero-Martin (6), E. Pellegrin (6), K. Nenkov (2), A. Herklotz (7), A. Ernst (4), I. Mertig (1,4), Z. Hu (3), K. Dörr (1,2)
(1) Institute of Physics, Martin Luther University Halle-Wittenberg, Halle, Germany. (2) IFW Dresden, Institute for Metallic Materials, Dresden, Germany. (3) Max Planck Institute for Chemical Physics of Solids, Dresden, Germany. (4) Max Planck Institute of Microstructure Physics, Halle, Germany. (5) Institute of Physics II, University of Cologne, Cologne, Germany. (6) ALBA Synchrotron Light Source, Barcelona, Spain. (7) Oak Ridge National Laboratory, Materials Science and Technology Division, Oak Ridge, Tennessee, USA.

Friday, September, 9, 2016

 

Thermoelectrics

8:30
invited
Accelerated discovery of new thermoelectric materials by high throughput ab-initio computations and experimental validation
R. Chmielowski (1), S. Jacob (1), S. Bhattacharya (2), D. Péré (1), G. K. H. Madsen (2), and G. Dennler (1)
(1) IMRA Europe S.A.S., Sophia Antipolis Cedex, France. (2) Department of Atomistic Modelling and Simulation, ICAMS, Ruhr-Universität Bochum, Germany.
9:00 Electrical Conductivity Improved Cu2SnS3 Thermoelectric Devices
S. Nakamura* (1), H. Funabiki (1) and S. Shiga (2)
(1) National Institute of Technology, Tsuyama College, Tsuyama, Okayama, Japan. (2) National Institute of Technology, Niihama College, Niihama, Ehime, Japan.
9:15 First-principles study of optical properties of incommensurate phase in TlInSe2 and TlInS2
M. Ishikawa* (1), T. Nakayama (1), K. Wakita (2), Y.G.Shim (3) and N.Mamedov (4)
(1) Department of Physics, Chiba University, Chiba, Japan. (2) Department of Electrical and Electronics Engineering, Chiba Institute of Technology, Tsudanuma, Narashino, Chiba, Japan. (3) Department of Physics and Electronics, Osaka Prefecture University, Osaka, Japan. (4) Institute of Physics, Azerbaijan National Academy of Sciences, Baku, Azerbaijan.
9:30 Structure and thermoelectric properties of composite materials
in the system Cu/Ge/Sb/Se/Te

Daniel Souchay, Stefan Schwarzmüller, Daniel Günther, Alex Gocke, Gerald Wagner and Oliver Oeckler*
Universität Leipzig, Fakultät für Chemie und Mineralogie; Institut für Mineralogie, Kristallographie und Materialwissenschaft, Leipzig, Germany.
9:45 BaCu2Se2 as new thermoelectric copper chalcogenide
D. Berardan* (1), J. Li (1,2) and N. Dragoe (2)
(1) SP2M-ICMMO, Univ. Paris Sud, Orsay, France. (2) School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, China.

Chalcopyrites IV

8:30 Composition-ratio control of CuInS2 films using PLD
Issei Kyan (1), Ryo Yoshida (1), Yong-Gu Shim (2), and Kazuki Wakita (1)
(1) Chiba Institute of Technology, Narashino, Chiba, Japan. (2) Osaka Prefecture University, Naka-ku, Sakai, Osaka, Japan.
8:45 CuInS2 thin films and their solar cells by alternative reactive-sputtering method with facing targets sputtering system
R. Ishikawa, K. Narumi, K. Yamada, T. Nomoto, N. Tsuboi*
Niigata University, Nishi-ku, Niigata, Japan.
9:00 Investigation of Se-free (Ag,Cu)(In,Ga)S2 solar cells
Homare Hiroi* (1,2), Yasuaki Iwata (1) , Hiroki Sugimoto (1) and Akira Yamada (2)
(1) Solar Frontier K.K., Atsugi, Kanagawa, Japan. (2) Tokyo Institute of Technology, Tokyo, Japan.
9:30 Phase-transformation studies during simultaneous chalcogenization
process using metalorganic sources for CuIn(S,Se) 2 thin films

R. Shoji (1), Y. Kayama (1), S. F. Chichibu (2) and M. Sugiyama* (1)
(1) Department of Electrical Engineering, Faculty of Science & Technology, Tokyo University of Science, Noda, Japan. (2) Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Aoba, Sendai, Japan.
9:45 Crystallographic and Optical Properties of CuInS2-Cu2ZnSnS4 crystals
K. Oishi*, W. Shimizu, A. Takeuchi, G. Nishida, M. Yamazaki, M. Nakagawa, N. Aoyagi and H. Katagiri
National Institute of Technology, Nagaoka College, Niigata, Japan.

Ferroelectric PV II

10:30
invited
Topological structures as nanoscale functional elements: The case of domain walls in multiferroic oxides
Jan Seidel
School of Materials Science and Engineering, UNSW Australia, Sydney, Australia.
11:00
invited
Functional domain walls in multiferroics
D. Meier
Department of Materials Science and Engineering, Norwegian University of Science and Technology, Trondheim, Norway.
11:30
invited
Semiconducting Bulk Ferroelectric Photovoltaics
J. Spanier
Department of Materials Science & Engineering and Department of Physics, Drexel University, Philadelphia, USA.
12:00 On the origin of shortcircuit photocurrent on BaTiO3 films
I. Fina*, F. Liu, F. Sànchez, J. Fontcuberta
Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, Catalonia, Spain.
12:15 Photoelectronic processes in multiferroic materials
Akash Bhatnagar*, Mingmin Yang, and Marin Alexe
Department of Physics, University of Warwick, Coventry, United Kingdom.